ULTRAFAST RECTIFIERS 1.0 A, 50 V ??600 V

Features • Glass passivated chip • Super fast switching time for hight efficiency • Low reverse leakage current • High surge capacity • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0

封装/外壳：DO-204AL，DO-41，轴向 包装：卷带（TR） 描述：DIODE GEN PURP 400V 1A AXIAL 分立半导体产品 二极管 - 整流器 - 单

SWITCHMODE Power Rectifiers

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SWITCHMODE Power Rectifiers

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SWITCHMODE Power Rectifiers

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Ultrafast 25, 50 and 75 Nanosecond Recovery Times

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SWITCHMODE Power Rectifiers

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封装/外壳：DO-204AL，DO-41，轴向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 400V 1A AXIAL 分立半导体产品 二极管 - 整流器 - 单

SWITCHMODE Power Rectifiers

文件：121.83 Kbytes Page：7 Pages

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

POWER TRANSISTORS(10A,60-100V,125W)

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP