Ultrafast Plastic Rectifier

FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and

封装/外壳：DO-204AC，DO-15，轴向 包装：卷带（TR） 描述：DIODE GEN PURP 400V 1A DO204AC 分立半导体产品 二极管 - 整流器 - 单

DIODE GEN PURP 400V 1A DO204AC

DIODE GEN PURP 400V 1A DO204AC

封装/外壳：DO-204AC，DO-15，轴向 包装：带盒（TB） 描述：DIODE GEN PURP 400V 1A DO204AC 分立半导体产品 二极管 - 整流器 - 单

Surface-Mount Schottky Barrier Rectifier

FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definit

Surface Mount Schottky Barrier Rectifier

FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definiti

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclud

Power MOSFET

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