Surface Mount Schottky Barrier Rectifier

FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definiti

Surface-Mount Schottky Barrier Rectifier

FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definit

Surface Mount Schottky Barrier Rectifier

Low profile package\nIdeal for automated placement\nGuardring for overvoltage protection;

封装/外壳：DO-214AC，SMA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 40V 1A DO214AC 分立半导体产品 二极管 - 整流器 - 单

Surface Mount Schottky Barrier Rectifier

文件：111.87 Kbytes Page：5 Pages

Surface Mount Schottky Barrier Rectifier

文件：111.87 Kbytes Page：5 Pages

封装/外壳：DO-214AC，SMA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 40V 1A DO214AC 分立半导体产品 二极管 - 整流器 - 单

Surface Mount Schottky Barrier Rectifier

文件：111.87 Kbytes Page：5 Pages

Surface Mount Schottky Barrier Rectifier

文件：111.87 Kbytes Page：5 Pages

Ultrafast Plastic Rectifier

FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclud

Power MOSFET

文件：1.78938 Mbytes Page：11 Pages