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MUR1060FCT

丝印代码:MUR1060FCT;Ultra-Fast Recovery Recifier Diodes MUR1060FCT

Features Adopt FRED chip Low forward Voltage drop Fast reverse recovery time High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability

RFE

RFE international

MUR1060FCT

Switchmode Ultra-fast Power Rectifiers

FEATURES * Low forward voltage drop * High current capability * High reliability * Low Power Loss,High Efficiency * Ultrafast 35 Nanosecond Recovery times

LUGUANG

鲁光电子

MUR1060FCT

Ultra-Fast Recovery Diodes 5A*2 Pt

Features ● Adopt FRD chip ● Low forward Voltage drop ● Fast reverse recovery time ● High frequency operation ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability Typical

LUGUANG

鲁光电子

MUR1060FCT

10.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

MUR1060FCT

超快恢复二极管

MCC

MUR1060FCT

ULTRAFST RECOVERY RECTIFIERS

文件:843.2 Kbytes Page:3 Pages

YFWDIODE

佑风微

MUR1060FCT

Ultra Fast Recover diode

文件:354.41 Kbytes Page:7 Pages

GOOD-ARK

固锝电子

MUR1060FCT

10 Amp Super Fast Recovery Rectifier 50 to 600 Volts

文件:536.52 Kbytes Page:3 Pages

MCC

MUR1060FCT

10.0 Ampere Insulated Common Cathode Ultra Fast Recovery Rectifiers

文件:840.83 Kbytes Page:2 Pages

THINKISEMI

思祁半导体

10.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

Ultra-Fast Recovery Diodes 5A*2 Pt

Features ● Adopt FRD chip ● Low forward Voltage drop ● Fast reverse recovery time ● High frequency operation ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability Typical

LUGUANG

鲁光电子

SWITCHMODE??Power Rectifiers

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara

MOTOROLA

摩托罗拉

Integrated Circuit AM-RF Amp, Mix/OSC, FM-AM IF Amp

Description: The NTE1060 is an integrated circuit designed for FM/AM radio receiver applications. The AM section consists of an AM–RF amplifier, a frequency converter and an IF amplifier circuit. The FM section has an IF amplifier circuit. Features: ● Improved Stability because the FM and AM Se

NTE

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 10.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity.

PANJIT

強茂

2.5 V HIGH PRECISION REFERENCE VOLTAGE CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

2.5 V HIGH PRECISION REFERENCE VOLTAGE CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

MUR1060FCT产品属性

  • 类型

    描述

  • VRM (V):

     600

  • IFSM (A):

     80

  • IF (A):

     10

  • VF (V):

     1.5

  • IFM (A):

     5.0

  • TRR (μs):

     0.05

  • IR (μA):

     10

  • @VR (V):

     600

  • Package Qty:

     Tube

  • FIT:

     40; Tj=100℃

更新时间:2026-5-14 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOT
23+
NA
20000
全新原装假一赔十
肖特二极管
24+/25+
DIP
1000
原装正品现货库存价优
ON
2018+
SOP8
26976
代理原装现货/特价热卖!
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON/安森美
21+
DO-41
30000
百域芯优势 实单必成 可开13点增值税
VISHAYMAS
25+23+
DO-41
25174
绝对原装正品现货,全新深圳原装进口现货
MOTOROLA
25+
24
公司优势库存 热卖中!
扬杰
22+
ITO-220AB
20000
公司只有原装 品质保障
GD/兆易创新
24+
TO-220
28235
郑重承诺只做原装进口现货

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