| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MUR1060FCT | 丝印代码:MUR1060FCT;Ultra-Fast Recovery Recifier Diodes MUR1060FCT Features Adopt FRED chip Low forward Voltage drop Fast reverse recovery time High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability | RFE RFE international | ||
MUR1060FCT | Switchmode Ultra-fast Power Rectifiers FEATURES * Low forward voltage drop * High current capability * High reliability * Low Power Loss,High Efficiency * Ultrafast 35 Nanosecond Recovery times | LUGUANG 鲁光电子 | ||
MUR1060FCT | Ultra-Fast Recovery Diodes 5A*2 Pt Features ● Adopt FRD chip ● Low forward Voltage drop ● Fast reverse recovery time ● High frequency operation ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability Typical | LUGUANG 鲁光电子 | ||
MUR1060FCT | 10.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | ||
MUR1060FCT | 超快恢复二极管 | MCC | ||
MUR1060FCT | ULTRAFST RECOVERY RECTIFIERS 文件:843.2 Kbytes Page:3 Pages | YFWDIODE 佑风微 | ||
MUR1060FCT | Ultra Fast Recover diode 文件:354.41 Kbytes Page:7 Pages | GOOD-ARK 固锝电子 | ||
MUR1060FCT | 10 Amp Super Fast Recovery Rectifier 50 to 600 Volts 文件:536.52 Kbytes Page:3 Pages | MCC | ||
MUR1060FCT | 10.0 Ampere Insulated Common Cathode Ultra Fast Recovery Rectifiers 文件:840.83 Kbytes Page:2 Pages | THINKISEMI 思祁半导体 | ||
10.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
Ultra-Fast Recovery Diodes 5A*2 Pt Features ● Adopt FRD chip ● Low forward Voltage drop ● Fast reverse recovery time ● High frequency operation ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability Typical | LUGUANG 鲁光电子 | |||
SWITCHMODE??Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara | MOTOROLA 摩托罗拉 | |||
Integrated Circuit AM-RF Amp, Mix/OSC, FM-AM IF Amp Description: The NTE1060 is an integrated circuit designed for FM/AM radio receiver applications. The AM section consists of an AM–RF amplifier, a frequency converter and an IF amplifier circuit. The FM section has an IF amplifier circuit. Features: ● Improved Stability because the FM and AM Se | NTE | |||
SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 10.0 Ampere) FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. | PANJIT 強茂 | |||
2.5 V HIGH PRECISION REFERENCE VOLTAGE CIRCUIT SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |||
2.5 V HIGH PRECISION REFERENCE VOLTAGE CIRCUIT SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 |
MUR1060FCT产品属性
- 类型
描述
- VRM (V):
600
- IFSM (A):
80
- IF (A):
10
- VF (V):
1.5
- IFM (A):
5.0
- TRR (μs):
0.05
- IR (μA):
10
- @VR (V):
600
- Package Qty:
Tube
- FIT:
40; Tj=100℃
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
肖特二极管 |
24+/25+ |
DIP |
1000 |
原装正品现货库存价优 |
|||
ON |
2018+ |
SOP8 |
26976 |
代理原装现货/特价热卖! |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON/安森美 |
21+ |
DO-41 |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
VISHAYMAS |
25+23+ |
DO-41 |
25174 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
MOTOROLA |
25+ |
24 |
公司优势库存 热卖中! |
||||
扬杰 |
22+ |
ITO-220AB |
20000 |
公司只有原装 品质保障 |
|||
GD/兆易创新 |
24+ |
TO-220 |
28235 |
郑重承诺只做原装进口现货 |
MUR1060FCT规格书下载地址
MUR1060FCT参数引脚图相关
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类型 描述 选取全部项目 类别 电缆,电线 - 管理 电缆扎带 - 支座和附件 制造商 Panduit Corp 系列 MTP 零件状态 有源 类型 多开 安装类型 螺钉 - #6 大小/尺寸 4.25 长 x 0.50 宽 x 0.12 高(107.9mm x 12.7mm x 3.0mm) 配套使用产品/相关产品 M,I,S 束带 材料 尼龙 颜色 天然
2019-10-30MUR1620CTRT4G全新原装现货
可立即发货
2019-9-24
DdatasheetPDF页码索引
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