isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.55Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N?묬hannel Power MOSFET

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TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

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N−Channel Power MOSFET

TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

文件：70.77 Kbytes Page：2 Pages

TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

文件：70.77 Kbytes Page：2 Pages

isc N-Channel Mosfet Transistor

·FEA TURES ·Drain Current –ID= 7.5A@TC=25℃ ·Drain Source Voltage-: VDSS= 600V(Min) ·Static Drain-SourceOn-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high effi

7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ap

7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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8A 600V N-channel Enhancement Mode Power MOSFET

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