TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHM

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMO

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N?묬hannel Power MOSFET

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N−Channel Power MOSFET

7.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pul

Drain Current ID= 7A@ TC=25C

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7A 800V N-channel Enhancement Mode Power MOSFET

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7A 800V N-channel Enhancement Mode Power MOSFET

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7A 800V N-channel Enhancement Mode Power MOSFET

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