位置：首页 > IC中文资料第6876页 > MTW6N100
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MTW6N100 | TMOSPOWERFET6.0AMPERES1000VOLTSRDS(on)=1.5OHM TMOSE−FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMO | MotorolaMotorola, Inc 摩托罗拉 |  |   |
TMOSPOWERFET6.0AMPERES1000VOLTSRDS(on)=1.5OHM TMOSE−FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMO | MotorolaMotorola, Inc 摩托罗拉 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N?묬hannelPowerMOSFET 文件：214.54 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
PowerMOSFETs Features ●RFcapableMOSFETs ●Doublemetalprocessforlowgateresistance ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●Fastintrinsicrectifier Applications ●DC-DCconverters ●Switch | IXYS IXYS Integrated Circuits Division |  | | |
HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | | | |
N-CHANNELENHANCEMENTMODEPOWERMOSFET 文件：73.99 Kbytes Page：6 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 |  | | |
N-CHANNELENHANCEMENTMODEPOWERMOSFET 文件：74.25 Kbytes Page：6 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNELENHANCEMENTMODEPOWERMOSFET 文件：72.64 Kbytes Page：6 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | |
MTW6N100产品属性
- 类型
描述
- 型号
MTW6N100
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2 |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
23+ |
N/A |
90650 |
正品授权货源可靠 |
||||
ON |
1746+ |
TO247 |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
|||
MOTOLA |
23+ |
2800 |
正品原装货价格低qq:2987726803 |
||||
ON/安森美 |
23+ |
DPAK-3 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
100000 |
自己现货 |
||||||
ON |
24+ |
TO-247 |
5000 |
只做原装公司现货 |
|||
FRE |
23+ |
TO |
10000 |
公司只做原装正品 |
|||
FRE |
22+ |
TO |
6000 |
十年配单,只做原装 |
|||
ON/安森美 |
23+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
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可立即发货
2019-9-24
DdatasheetPDF页码索引
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