位置:首页 > IC中文资料第6876页 > MTW6N100
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MTW6N100 | TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMO | MOTOROLA 摩托罗拉 | ||
MTW6N100 | TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM | ETC 知名厂家 | ETC | |
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMO | MOTOROLA 摩托罗拉 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
N−Channel Power MOSFET | ONSEMI 安森美半导体 | |||
N?묬hannel Power MOSFET 文件:214.54 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
Power MOSFETs Features ● RF capable MOSFETs ● Double metal process for low gate resistance ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic rectifier Applications ● DC-DC converters ● Switch | IXYS 艾赛斯 | |||
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM TMOS E-FET™ Power Field Effect Transistor D3PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require sur | MOTOROLA 摩托罗拉 | |||
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.75 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED | STMICROELECTRONICS 意法半导体 |
MTW6N100产品属性
- 类型
描述
- 型号
MTW6N100
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA/摩托罗拉 |
24+ |
TO247 |
22055 |
郑重承诺只做原装进口现货 |
|||
MOT |
25+23+ |
TO-3P |
41672 |
绝对原装正品全新进口深圳现货 |
|||
MOTOROLA/摩托罗拉 |
24+ |
TO-247 |
7850 |
只做原装正品现货或订货假一赔十! |
|||
MOT |
25+ |
TO-3P |
27500 |
原装正品,价格最低! |
|||
FRE |
23+ |
TO |
15887 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
METALINK |
2007 |
QFN88 |
3980 |
原装现货海量库存欢迎咨询 |
|||
FRE |
25+ |
TO |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ON/安森美 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
ON/安森美 |
23+ |
DPAK-3 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
METALINK |
0752+ |
QFN |
497 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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