型号 功能描述 生产厂家 企业 LOGO 操作
MTW6N100

TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMO

MOTOROLA

摩托罗拉

MTW6N100

TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM

ETC

知名厂家

TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMO

MOTOROLA

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N−Channel Power MOSFET

ONSEMI

安森美半导体

N?묬hannel Power MOSFET

文件:214.54 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFETs

Features ● RF capable MOSFETs ● Double metal process for low gate resistance ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic rectifier Applications ● DC-DC converters ● Switch

IXYS

艾赛斯

TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM

TMOS E-FET™ Power Field Effect Transistor D3PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require sur

MOTOROLA

摩托罗拉

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.75 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED

STMICROELECTRONICS

意法半导体

MTW6N100产品属性

  • 类型

    描述

  • 型号

    MTW6N100

  • 制造商

    MOTOROLA

  • 制造商全称

    Motorola, Inc

  • 功能描述

    TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM

更新时间:2026-3-14 13:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOTOROLA/摩托罗拉
24+
TO247
22055
郑重承诺只做原装进口现货
MOT
25+23+
TO-3P
41672
绝对原装正品全新进口深圳现货
MOTOROLA/摩托罗拉
24+
TO-247
7850
只做原装正品现货或订货假一赔十!
MOT
25+
TO-3P
27500
原装正品,价格最低!
FRE
23+
TO
15887
原厂授权一级代理,专业海外优势订货,价格优势、品种
METALINK
2007
QFN88
3980
原装现货海量库存欢迎咨询
FRE
25+
TO
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
ON/安森美
25+
NA
880000
明嘉莱只做原装正品现货
ON/安森美
23+
DPAK-3
69820
终端可以免费供样,支持BOM配单!
METALINK
0752+
QFN
497
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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