TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMO

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N?묬hannel Power MOSFET

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10A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 10N100-FL is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high sp

It has ferrite and 100 Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.

文件：67.43 Kbytes Page：7 Pages

It has ferrite and 100 Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.

文件：67.43 Kbytes Page：7 Pages

It has ferrite and 100 Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.

文件：67.43 Kbytes Page：7 Pages

It has ferrite and 100 Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.

文件：67.43 Kbytes Page：7 Pages