TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM

TMOS E−FET Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surfa

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM

This new power MOSFET realized the low switching loss and low switching noise

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iscN-Channel MOSFET Transistor

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iscN-Channel MOSFET Transistor

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iscN-Channel MOSFET Transistor

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