TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM

TMOS E−FET Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surfa

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 500V(D-S) Super Junction Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Low RDS(on) • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power Supply (

25A 500V N-channel enhanced field effect transistor

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This new power MOSFET realized the low switching loss and low switching noise

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THINKISEMI 20A,500V N-CHANNEL PLANAR STRIPE POWER MOSFETs

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Power switch circuit of adaptor and charger.

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