POWER FIELD EFFECT TRANSISTOR

Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 8 AMPERES rDS(on) = 0.4 OHM 80 and 100 VOLTS

POWER FIELD EFFECT TRANSISTOR

Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 8 AMPERES rDS(on) = 0.4 OHM 80 and 100 VOLTS

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -8A@ TC=25℃ ·Drain Source Voltage -VDSS= -100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 100-V (D-S) MOSFET

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POWER FIELD EFFECT TRANSISTOR

100V P-Channel MOSFET

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

100V P-Channel MOSFET

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

100V P-Channel MOSFET

文件：662.86 Kbytes Page：8 Pages