isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 60-V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS

HDTMOS E-FET High Density Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. De

N?묬hannel Power MOSFET

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N−Channel Power MOSFET

TMOS POWER FET 75 AMPERES 60 VOLTS

N–Channel Enhancement–Mode Silicon Gate TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components with higher power and lower RDS(on) capabilities. This advance

TMOS POWER FET 75 AMPERES 60 VOLTS

N–Channel Enhancement–Mode Silicon Gate TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components with higher power and lower RDS(on) capabilities. This advance

Power MOSFET

75 AMPERES, 60 VOLTS RDS(on) = 9.5 mΩ
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • Converters • P

Power MOSFET

75 AMPERES, 60 VOLTS RDS(on) = 9.5 mΩ
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • Converters • P