位置:首页 > IC中文资料第5601页 > MTP33N10
型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
MTP33N10 | TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for | Motorola 摩托罗拉 | ||
MTP33N10 | TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM | ETC 知名厂家 | ETC | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 33A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 60mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for | Motorola 摩托罗拉 | |||
N?묬hannel Power MOSFET 文件:212.53 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
N−Channel Power MOSFET | ONSEMI 安森美半导体 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=36A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 52mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv | ISC 无锡固电 | |||
100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and wi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Fast Switching 文件:67.44 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:245.5 Kbytes Page:2 Pages | ISC 无锡固电 |
MTP33N10产品属性
- 类型
描述
- 型号
MTP33N10
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
24+ |
TO-220 |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
|||
MOT |
24+ |
N/A |
3890 |
||||
ON/安森美 |
23+ |
TO-220 |
6000 |
原装正品,支持实单 |
|||
VBsemi |
25+ |
TO220 |
10065 |
只做原装进口!正品支持实单! |
|||
N/A |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ONSEMI/安森美 |
25+ |
TO220 |
20300 |
ONSEMI/安森美原装特价MTP33N10E即刻询购立享优惠#长期有货 |
|||
VBsemi |
21+ |
TO220 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
|||
ON |
NEW |
TO-220 |
6893 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ON |
24+ |
TO-220 |
6430 |
原装现货/欢迎来电咨询 |
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类型 描述 选取全部项目 类别 电缆,电线 - 管理 电缆扎带 - 支座和附件 制造商 Panduit Corp 系列 MTP 零件状态 有源 类型 多开 安装类型 螺钉 - #6 大小/尺寸 4.25 长 x 0.50 宽 x 0.12 高(107.9mm x 12.7mm x 3.0mm) 配套使用产品/相关产品 M,I,S 束带 材料 尼龙 颜色 天然
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