N-Channel Power MOSFETs, 2.25A, 350-400V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. • Low RDS(on) • VGS Rated at ±20 V

IRF710-713 MTP2N35/2N40 N-Channel Power MOSFETs

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. • Low RDS(on) • VGS Rated at ±20 V

N-Channel Power MOSFETs, 2.25 A, 350-400 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. • Low RDS(on) • VGS Rated at ±20 V

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Power MOSFETs

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N-Channel 650 V (D-S) MOSFET

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TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM

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N?묬hannel Enhancement?묺ode Silicon Gate

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N−Channel Enhancement−Mode Silicon Gate

2.0A, 400V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 2N40-V is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applica

2 Amps, 400 Volts N-CHANNEL POWER MOSFET

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2A, 400V N-CHANNEL POWER MOSFET

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N-Channel 650 V (D-S) MOSFET

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GERMANIUM PNP TRANSISTORS

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