N?묬hannel Enhancement?묺ode Silicon Gate

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TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM

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N-Channel 650 V (D-S) MOSFET

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N−Channel Enhancement−Mode Silicon Gate

2.0A, 400V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 2N40-V is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applica

2 Amps, 400 Volts N-CHANNEL POWER MOSFET

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2A, 400V N-CHANNEL POWER MOSFET

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N-Channel 650 V (D-S) MOSFET

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GERMANIUM PNP TRANSISTORS

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