TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on)= 0.12 OHM New Features of TMOS V • On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E–FET Predecessors Features Common to TMOS V and TMOS E–FETS • Av

Power MOSFET

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TMOS V Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate

Power MOSFET

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on)= 0.085 OHM New Features of TMOS V • On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on)Technology • Faster Switching than E–FET Predecessors Features Common to TMOS V and TMOS E–FETS

TMOS V Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate

Power MOSFET

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N -CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

DESCRIPTION The UTC 15N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

Fast Switching

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15A, 60V N-CHANNEL POWER MOSFET

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N-Channel 60 V (D-S) MOSFET

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60V N-Channel Enhancement Mode MOSFET

文件：153.75 Kbytes Page：4 Pages