TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS

Logic Level TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery

Power MOSFET 10 A, 100 V, Logic Level, N?묬hannel TO??20

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TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS

功率 MOSFET，10 A，100 V，逻辑电平

N-Channel 100-V (D-S) MOSFET

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Power MOSFET 10 A, 100 V, Logic Level, N?묬hannel TO??20

文件：107.39 Kbytes Page：8 Pages

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs

TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

TMOS IV Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced “E” series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation modes. These new energy efficient devices also offer drain–to–source diodes with fast recovery

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated

SIPMOS Power-Transistor

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