N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs

IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power MOSFETs

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs

N-Channel Power Mosfets,

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Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220AB

TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

TMOS IV Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced “E” series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation modes. These new energy efficient devices also offer drain–to–source diodes with fast recovery

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION · Power supply high-speed switching · Power converters · PWM motor bridge control

TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS

Logic Level TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery

Power MOSFET

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Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220 Rail

Power MOSFET 10 A, 100 V, Logic Level, N?묬hannel TO??20

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Power MOSFET 10 A, 100 V, Logic Level, N?묬hannel TO??20

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N-Channel 100-V (D-S) MOSFET

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N-Channel 100-V (D-S) MOSFET

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SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated

SIPMOS Power-Transistor

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