型号 功能描述 生产厂家&企业 LOGO 操作
MTP10N10

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MTP10N10

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MTP10N10

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MTP10N10

IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power MOSFETs

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MTP10N10

N-Channel Power Mosfets,

文件:338.75 Kbytes Page:5 Pages

ARTSCHIP

TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

TMOS IV Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced “E” series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation modes. These new energy efficient devices also offer drain–to–source diodes with fast recovery

Motorola

摩托罗拉

TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS

Logic Level TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery

Motorola

摩托罗拉

Power MOSFET

文件:242.25 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET 10 A, 100 V, Logic Level, N?묬hannel TO??20

文件:107.39 Kbytes Page:8 Pages

ONSEMI

安森美半导体

N-Channel 100-V (D-S) MOSFET

文件:937.44 Kbytes Page:7 Pages

VBSEMI

微碧半导体

Power MOSFET 10 A, 100 V, Logic Level, N?묬hannel TO??20

文件:107.39 Kbytes Page:8 Pages

ONSEMI

安森美半导体

N-Channel 100-V (D-S) MOSFET

文件:937.33 Kbytes Page:7 Pages

VBSEMI

微碧半导体

SIPMOS Power-Transistor

文件:787.36 Kbytes Page:8 Pages

Infineon

英飞凌

N-Channel 100 V (D-S) MOSFET

文件:1.69376 Mbytes Page:7 Pages

VBSEMI

微碧半导体

Panels and Panel Accessories

文件:2.00209 Mbytes Page:16 Pages

PENTAIR

滨特尔

Panels and Panel Accessories

文件:2.00209 Mbytes Page:16 Pages

PENTAIR

滨特尔

PERFORATED PANELS

文件:1.87751 Mbytes Page:16 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

MTP10N10产品属性

  • 类型

    描述

  • 型号

    MTP10N10

  • 制造商

    FAIRCHILD

  • 制造商全称

    Fairchild Semiconductor

  • 功能描述

    N-Channel Power MOSFETs, 11 A, 60-100 V

更新时间:2025-8-14 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
23+
TO-TO-220
15400
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON
10+
TO220-5
7800
全新原装正品,现货销售
NEXPERIA/安世
23+
SOD123F
69820
终端可以免费供样,支持BOM配单!
MOT
23+
TO-220
12800
公司只有原装 欢迎来电咨询。
ON/安森美
23+
TO-220
89630
当天发货全新原装现货
ON
24+
TO-220
16800
绝对原装进口现货 假一赔十 价格优势!?
MOT
05+
TO-220
3000
原装进口
ON Semiconductor
22+
TO2203
9000
原厂渠道,现货配单
VBSEMI/微碧半导体
24+
TO220
7800
全新原厂原装正品现货,低价出售,实单可谈
ON
24+
原厂封装
65250
支持样品,原装现货,提供技术支持!

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