N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR These TMOS Power FETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds — Switching Times

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

55 and 60 AMPERE N-Channel TMOS POWER FETs rDS(on) = 0.04 OHM 80 and 100 VOLTS rDS(on) = 0.28 OHM 50 and 60 VOLTS

N-CHANNEL TWOS POWER FETs

55 and 60 AMPERE N-Channel TMOS POWER FETs rDS(on) = 0.04 OHM 80 and 100 VOLTS rDS(on) = 0.28 OHM 50 and 60 VOLTS

N-Channel Enhancement Mode Power MOSFET

Description The 60N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

60 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) ≤ 18mΩ @ VGS=10V, ID=30A * Ultra low gate charge ( ty

60A, 60V N-CHANNEL POWER MOSFET

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isc N-Channel MOSFET Transistor

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N-Channel 60-V (D-S) MOSFET

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