isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFETs

Features ● RF capable MOSFETs ● Double metal process for low gate resistance ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic rectifier Applications ● DC-DC converters ● Switch

TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM

TMOS E-FET™ Power Field Effect Transistor D3PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require sur

TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMO

TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMO

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.75 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED