N-Channel Enhancement Mode silicon Gate TMOS

TMOS POWER FETs 15 AMPERES rDS(on) = 0.3 OHM 350 and 400 VOLTS N-Channel Enhancement Mode silicon Gate TMOS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=15A@ TC=25℃ ·Drain Source Voltage -VDSS= 350V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Enhancement Mode silicon Gate TMOS

Internally Clamped N-Channel IGBT

Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high volt

Internally Clamped N-Channel IGBT

Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high volt

Ignition IGBT 15 Amps, 350 Volts N-Channel TO-220 and D2PAK

文件：250.45 Kbytes Page：10 Pages

Ignition IGBT 15 Amps, 350 Volts N-Channel TO-220 and D2PAK

文件：250.45 Kbytes Page：10 Pages