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型号	功能描述	生产厂家企业	LOGO
MT5C2565	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565	64K x 4 SRAM SRAM MEMORY ARRAY	AUSTIN	AUSTIN
MT5C2565C-15/883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565C-15SLASH883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565C-20/883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565C-20SLASH883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565C-25/883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565C-25SLASH883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565C-35/883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565C-35SLASH883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565C-45/883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565C-45SLASH883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565C-55/883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565C-55SLASH883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565C-70/883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565C-70SLASH883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565EC-15/883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565EC-15SLASH883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565EC-20/883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565EC-20SLASH883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565EC-25/883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565EC-25SLASH883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565EC-35/883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565EC-35SLASH883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565EC-45/883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565EC-45SLASH883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565EC-55/883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565EC-55SLASH883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565EC-70/883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN
MT5C2565EC-70SLASH883C	64K x 4 SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, and 45ns	AUSTIN	AUSTIN

MT5C2565产品属性

类型
描述
型号
MT5C2565
制造商
MT
功能描述
Static RAM, 64Kx4, 28 Pin, Plastic, DIP

MT5C2565供应商更多...

更新时间：2025-12-25 19:10:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市明嘉莱科技有限公司	MT5C2568-12	MICRON/美光	24+	NA	990000	明嘉莱只做原装正品现货	询价
深圳市创新迹电子有限公司	MT5C2565EC-25	ASI	22+	LCC	20000	公司只有原装品质保障	询价
深圳市赛美科科技有限公司	MT5C2568-10	MITEL		NA	8560	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市赛特兴科技有限公司	MT5C2565EC-25/883C	ASI	QQ咨询	CLCC	1455	全新原装研究所指定供货商	询价
深圳市卓越微芯电子有限公司	MT5C2565DJ-25	MT	25+	BULKPL	1067	百分百原装正品真实公司现货库存本公司只做原装可	询价
标准国际(香港)有限公司	MT5C2565DJ-25	MT	25+		83	公司优势库存热卖中!!	询价
深圳市美思瑞电子科技有限公司	MT5C2565EC-15L/883	ASI	22+	CLCC	12245	现货,原厂原装假一罚十!	询价
贸泽芯城（深圳）电子科技有限公司	MT5C2565DJ-25	MIC	23+	SOP8	12430	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市华斯顿科技有限公司	MT5C2568-25	SUNDRY	25+23+	原厂原包	22979	绝对原装正品现货,全新深圳原装进口现货	询价
深圳市昊创电子有限公司	MT5C2565C-25	MICROSS	15+	28DIP.300	50	受控型号优势订货-军工器件供应商	询价

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MT5C2565产品属性

MT5C2565供应商更多...

MT5C2565芯片相关品牌

MT5C2565规格书下载地址

MT5C2565参数引脚图相关

MT5C2565数据表相关新闻

MT61K512M32KPA-21:U

MT61K512M32KPA-24:U

MT53E512M32D1ZW-046 IT:B TR 动态随机存取存储器

MT6625LN/A AOS/万代

MT53E768M32D4DT-053 AIT:E 假一罚十

MT53E512M32D2NP-053 WT:E 销售一系列芯片，全新原装，绝无虚假。

DdatasheetPDF页码索引