MT5C2561 SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-performance,

MT5C2561 SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-performance,

MT5C2561 SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-performance,

MT5C2561 SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-performance,

MT5C2561 SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-performance,

MT5C2561 SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-performance,