型号 功能描述 生产厂家 企业 LOGO 操作
MT5C1008ECA-35

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

MT5C1008ECA-35产品属性

  • 类型

    描述

  • 型号

    MT5C1008ECA-35

  • 制造商

    AUSTIN

  • 制造商全称

    Austin Semiconductor

  • 功能描述

    128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

更新时间:2026-3-15 17:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
原厂
2540+
CDIP32
6852
只做原装正品假一赔十为客户做到零风险!!
Micron
25+
8
公司优势库存 热卖中!!
ASI
22+
SOP
20000
公司只有原装 品质保障
N/A
24+
NA
300
进口原装正品优势供应
ASI
LCC
1
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ASI
2308+
CSOP
4862
只做进口原装!假一赔百!自己库存价优!
MICROSS
15+
32CDFP.400
50
受控型号优势订货-军工器件供应商
ASI
23+
SOP32
11
全新原装正品现货,支持订货
ASI
23+
SOP32
14955
原厂授权一级代理,专业海外优势订货,价格优势、品种
N/A
23+
NA
50000
全新原装正品现货,支持订货

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