型号 功能描述 生产厂家 企业 LOGO 操作
MT5C1008DCJ-70

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

MT5C1008DCJ-70产品属性

  • 类型

    描述

  • 型号

    MT5C1008DCJ-70

  • 制造商

    AUSTIN

  • 制造商全称

    Austin Semiconductor

  • 功能描述

    128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

更新时间:2025-11-19 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MRON/镁光
24+
NA/
151
优势代理渠道,原装正品,可全系列订货开增值税票
MICRON
95+
SOJ
58
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MCT
24+/25+
32
原装正品现货库存价优
N/A
24+
NA
990000
明嘉莱只做原装正品现货
MIT
25+
SOJ
2987
绝对全新原装现货供应!
MICRON
原厂封装
9800
原装进口公司现货假一赔百
SUNDRY
25+23+
原厂原包
22980
绝对原装正品现货,全新深圳原装进口现货
MICROSS
15+
32QUADCLCC
50
受控型号优势订货-军工器件供应商
ASI
QQ咨询
SOJ
842
全新原装 研究所指定供货商
24+
SOJ32
35210
一级代理/放心采购

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