型号 功能描述 生产厂家 企业 LOGO 操作
MT5C1008DCJ-45

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

MT5C1008DCJ-45产品属性

  • 类型

    描述

  • 型号

    MT5C1008DCJ-45

  • 制造商

    AUSTIN

  • 制造商全称

    Austin Semiconductor

  • 功能描述

    128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

更新时间:2026-3-2 23:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ASI
0826+
SOJ
15
一级代理,专注军工、汽车、医疗、工业、新能源、电力
N/A
24+
NA
990000
明嘉莱只做原装正品现货
MCT
24+/25+
32
原装正品现货库存价优
原厂
2540+
CLCC
6852
只做原装正品假一赔十为客户做到零风险!!
MT5C1008DJ-15
25+
5
5
MICRON
23+
SOJ
12800
公司只有原装 欢迎来电咨询。
SUNDRY
25+23+
原厂原包
22980
绝对原装正品现货,全新深圳原装进口现货
ROHS
ROHS
56520
一级代理 原装正品假一罚十价格优势长期供货
micron
24+
N/A
6980
原装现货,可开13%税票
ASI
QQ咨询
SOJ
838
全新原装 研究所指定供货商

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