型号 功能描述 生产厂家 企业 LOGO 操作
MT5C1008DCJ-45

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

MT5C1008DCJ-45产品属性

  • 类型

    描述

  • 型号

    MT5C1008DCJ-45

  • 制造商

    AUSTIN

  • 制造商全称

    Austin Semiconductor

  • 功能描述

    128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

更新时间:2025-10-5 10:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ASI
QQ咨询
SOJ
838
全新原装 研究所指定供货商
MIT
24+
SMD
5000
公司存货
MICRON/美光
24+
SOJ
22055
郑重承诺只做原装进口现货
MICROSS
15+
32QUADCLCC
50
受控型号优势订货-军工器件供应商
MT
25+
SOJ
2802
只做原装进口!正品支持实单!
MICRON/镁光
23+
SOJ
50000
全新原装正品现货,支持订货
24+
SOJ32
35210
一级代理/放心采购
ROHS
ROHS
56520
一级代理 原装正品假一罚十价格优势长期供货
MICRON/美光
23+
SOJ
14950
原厂授权一级代理,专业海外优势订货,价格优势、品种
N/A
24+
NA
990000
明嘉莱只做原装正品现货

MT5C1008DCJ-45数据表相关新闻