型号 功能描述 生产厂家 企业 LOGO 操作

256K x 4 SRAM SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

MT5C1005EC-25产品属性

  • 类型

    描述

  • 型号

    MT5C1005EC-25

  • 功能描述

    MT5C1005EC-25/883

更新时间:2026-1-3 10:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ASI
QQ咨询
DIP
1453
全新原装 研究所指定供货商
MICROSS
24+
NA
11000
原装正品 有挂有货 假一赔十
MICROSS
24+
原封装
1900
郑重承诺只做原装进口现货
MICROSS
2025+
N/A
2000
原装原厂发货7-15工作日
MICRON/美光
2402+
DIP32
8324
原装正品!实单价优!
原厂
13+
IC
1
普通
ASI
24+
CDIP
300
进口原装正品优势供应
MICROSS
15+
32DIP.400
50
受控型号优势订货-军工器件供应商
MICRON
24+
DIP32
10
MICRON
20+
1562
全新现货热卖中欢迎查询

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