型号 功能描述 生产厂家 企业 LOGO 操作

256K x 4 SRAM SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

256K x 4 SRAM SRAM MEMORY ARRAY

文件:103.01 Kbytes Page:13 Pages

AUSTIN

MT5C1005C-20产品属性

  • 类型

    描述

  • 型号

    MT5C1005C-20

  • 制造商

    Micross Components

  • 功能描述

    SRAM, 1MB - Rail/Tube

更新时间:2026-1-4 11:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ASI
2518+
AUCDIP
1546
只做原装正品现货或订货假一赔十!
MT
25+
DIP
4500
全新原装、诚信经营、公司现货销售!
ASI
23+
AUCDIP
14930
原厂授权一级代理,专业海外优势订货,价格优势、品种
原装
2308+
CDIP
4862
只做进口原装!假一赔百!自己库存价优!
MT
25+
DIP
485
百分百原装正品 真实公司现货库存 本公司只做原装 可
MT
2023+
DIP
5800
进口原装,现货热卖
MICRON
2023+
3000
进口原装现货
ASI
QQ咨询
CDIP
72
全新原装 研究所指定供货商
ASI
2021+
60000
原装现货,欢迎询价
MICRON/美光
2402+
DIP32
8324
原装正品!实单价优!

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