型号 功能描述 生产厂家&企业 LOGO 操作

DRAM

GENERALDESCRIPTION The16Megx4DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC16M4H9andMT4LC16M4G3arefunctionallyorganizedas16,777,216locationscontaining4bitseach.The16,777,216memorylo

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

DRAM

GENERALDESCRIPTION The16Megx4DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC16M4H9andMT4LC16M4G3arefunctionallyorganizedas16,777,216locationscontaining4bitseach.The16,777,216memorylo

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

DRAM

GENERALDESCRIPTION The16Megx4DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC16M4H9andMT4LC16M4G3arefunctionallyorganizedas16,777,216locationscontaining4bitseach.The16,777,216memorylo

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

DRAM

GENERALDESCRIPTION The16Megx4DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC16M4H9andMT4LC16M4G3arefunctionallyorganizedas16,777,216locationscontaining4bitseach.The16,777,216memorylo

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

DRAM

GENERALDESCRIPTION The16Megx4DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC16M4H9andMT4LC16M4G3arefunctionallyorganizedas16,777,216locationscontaining4bitseach.The16,777,216memorylo

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

DRAM

GENERALDESCRIPTION The16Megx4DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC16M4H9andMT4LC16M4G3arefunctionallyorganizedas16,777,216locationscontaining4bitseach.The16,777,216memorylo

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

DRAM

GENERALDESCRIPTION The16Megx4DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC16M4H9andMT4LC16M4G3arefunctionallyorganizedas16,777,216locationscontaining4bitseach.The16,777,216memorylo

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

DRAM

GENERALDESCRIPTION The16Megx4DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC16M4H9andMT4LC16M4G3arefunctionallyorganizedas16,777,216locationscontaining4bitseach.The16,777,216memorylo

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

MT4LC16M4H9产品属性

  • 类型

    描述

  • 型号

    MT4LC16M4H9

  • 制造商

    Micron Technology Inc

  • 功能描述

    DRAM Chip EDO 64M-Bit 16Mx4 3.3V 32-Pin SOJ Tray

更新时间:2024-6-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICRON
21+
SOP32
4550
全新原装现货
micron(镁光)
23+
NA/
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
MICRON
1738+
TSOP32
8529
科恒伟业!只做原装正品,假一赔十!
MT
2022
TSOP32
80000
原装现货,OEM渠道,欢迎咨询
MICRON
2020+
SOP32
16800
绝对原装进口现货,假一赔十,价格优势!?
MICRON
21+
BGA/TSOP
50000
特价来袭!美光一级代理入驻114电子网
MT
TSOP32
265209
假一罚十原包原标签常备现货!
MICRON
19+
SOP32
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
MICRON/美光
22+
SOJ32
16350
原装正品
MICRON
23+
SOP32
5000
原装正品,假一罚十

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