1 MEG x 4 DRAM Fast Page Mode DRAM

GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir

1 MEG x 4 DRAM Fast Page Mode DRAM

文件：1.1819 Mbytes Page：21 Pages

1 MEG x 4 DRAM Fast Page Mode DRAM

GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir

1 MEG x 4 DRAM Fast Page Mode DRAM

GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir

1 MEG x 4 DRAM Fast Page Mode DRAM

GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir

1 MEG x 4 DRAM Fast Page Mode DRAM

文件：1.1819 Mbytes Page：21 Pages

1 MEG x 4 DRAM Fast Page Mode DRAM

文件：1.1819 Mbytes Page：21 Pages