SYNCHRONOUS DRAM

General Description The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 134,217,728

SDR SDRAM MT48LC128M4A2 ??32 Meg x 4 x 4 banks MT48LC64M8A2 ??16 Meg x 8 x 4 banks MT48LC32M16A2 ??8 Meg x 16 x 4 banks

General Description The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 134,217,728

SYNCHRONOUS DRAM

General Description The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 134,217,728

512Mb x4, x8, x16 SDRAM

文件：2.50339 Mbytes Page：68 Pages

SDRAM

SDRAM 512M X16 TSOP

封装/外壳：54-TSOP（0.400"，10.16mm 宽） 包装：托盘托盘 描述：IC DRAM 512MBIT PAR 54TSOP II 集成电路（IC） 存储器

封装/外壳：54-TSOP（0.400"，10.16mm 宽） 包装：卷带（TR）剪切带（CT） 描述：IC DRAM 512MBIT PAR 54TSOP II 集成电路（IC） 存储器

IC DRAM 512M PARALLEL 54TSOP