封装/外壳：54-TSOP（0.400"，10.16mm 宽） 包装：托盘 描述：IC DRAM 128MBIT PAR 54TSOP II 集成电路（IC） 存储器

封装/外壳：54-TSOP（0.400"，10.16mm 宽） 包装：托盘 描述：IC DRAM 128MBIT PAR 54TSOP II 集成电路（IC） 存储器

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-