SDR SDRAM

文件：3.69368 Mbytes Page：86 Pages

SYNCHRONOUS DRAM

General Description The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 67,108,864-

SYNCHRONOUS DRAM 256Mb: x4, x8, x16 SDRAM

文件：2.04216 Mbytes Page：61 Pages

Synchronous DRAM 256Mb: x4, x8, x16 SDRAM

文件：2.64077 Mbytes Page：77 Pages

256Mb: x4, x8, x16 SDRAM

文件：3.64823 Mbytes Page：86 Pages

SDR SDRAM

文件：3.69368 Mbytes Page：86 Pages

封装/外壳：54-VFBGA 包装：卷带（TR） 描述：IC DRAM 256MBIT PARALLEL 54VFBGA 集成电路（IC） 存储器

封装/外壳：54-VFBGA 包装：托盘 描述：IC DRAM 256MBIT PARALLEL 54VFBGA 集成电路（IC） 存储器