512Mb: x4, x8, x16 DDR2 SDRAM

Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Duplicate output strobe (RDQS) option for x8 • DLL to align DQ and DQS transitions with CK • 4 internal banks for conc

DDR2 SDRAM

Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Duplicate output strobe (RDQS) option for x8 • DLL to align DQ and DQS transitions with CK • 4 internal banks for conc

封装/外壳：60-TFBGA 包装：散装 描述：IC DRAM 512MBIT PARALLEL 60FBGA 集成电路（IC） 存储器

封装/外壳：60-TFBGA 包装：卷带（TR） 描述：IC DRAM 512MBIT PARALLEL 60FBGA 集成电路（IC） 存储器

IC DRAM 512M PARALLEL 60FBGA

IC DRAM 512M PARALLEL 60FBGA

IC DRAM 512M PARALLEL 60FBGA

DDR2 SDRAM MT47H128M4 ??32 Meg x 4 x 4 banks MT47H64M8 ??16 Meg x 8 x 4 banks MT47H32M16 ??8 Meg x 16 x 4 banks

文件：9.2793 Mbytes Page：132 Pages