MT47H128M8价格

参考价格:¥795.4332

型号:MT47H128M8BT-37E 品牌:Micron Technology 备注:这里有MT47H128M8多少钱,2025年最近7天走势,今日出价,今日竞价,MT47H128M8批发/采购报价,MT47H128M8行情走势销售排行榜,MT47H128M8报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MT47H128M8

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

MT47H128M8

DDR2 SDRAM MT47H256M4 ??32 Meg x 4 x 8 banks MT47H128M8 ??16 Meg x 8 x 8 banks MT47H64M16 ??8 Meg x 16 x 8 banks

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Dup

Micron

美光

MT47H128M8产品属性

  • 类型

    描述

  • 型号

    MT47H128M8

  • 功能描述

    IC DDR2 SDRAM 1GBIT 92FBGA

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    1,000

  • 系列

    - 格式 -

  • 存储器

    RAM

  • 存储器类型

    移动 SDRAM

  • 存储容量

    256M(8Mx32)

  • 速度

    133MHz

  • 接口

    并联

  • 电源电压

    1.7 V ~ 1.95 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    90-VFBGA

  • 供应商设备封装

    90-VFBGA(8x13)

  • 包装

    带卷(TR)

  • 其它名称

    557-1327-2

更新时间:2025-11-17 18:57:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICRON/美光
25+
BGA
32000
MICRON/美光全新特价MT47H128M8CF-25E:H即刻询购立享优惠#长期有货
Micron
2450+
FBGA
6541
只做原装正品假一赔十为客户做到零风险!!
Micron
24+
60-TFBGA
5000
原厂原装,价格优势,欢迎洽谈!
MICRON
25+
FBGA60
2000
公司原装现货,热卖中!
MICRON/镁光
25+
FBGA
12500
专营美光原装现货
Micron
17+
FBGA
4500
进口原装!长期供应!绝对优势价格(诚信经营
MICRON/镁光
22+
FBGA60
9565
MICRON
23+
FBGA
4420
正规渠道,只有原装!
MICRON
24+
FBGA
25480
专营南亚DDR内存闪存原厂直销原装进口现货
MICRON
24+
FBGA
35200
一级代理/放心采购

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