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MT47H128M8价格
参考价格:¥795.4332
型号:MT47H128M8BT-37E 品牌:Micron Technology 备注:这里有MT47H128M8多少钱,2025年最近7天走势,今日出价,今日竞价,MT47H128M8批发/采购报价,MT47H128M8行情走势销售排行榜,MT47H128M8报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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MT47H128M8 | DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | ||
MT47H128M8 | DDR2SDRAMMT47H256M4??32Megx4x8banksMT47H128M8??16Megx8x8banksMT47H64M16??8Megx16x8banks DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | ||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 | |||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology 镁光美国镁光科技有限公司 |
MT47H128M8产品属性
- 类型
描述
- 型号
MT47H128M8
- 功能描述
IC DDR2 SDRAM 1GBIT 92FBGA
- RoHS
是
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
1,000
- 系列
- 格式 -
- 存储器
RAM
- 存储器类型
移动 SDRAM
- 存储容量
256M(8Mx32)
- 速度
133MHz
- 接口
并联
- 电源电压
1.7 V ~ 1.95 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
90-VFBGA
- 供应商设备封装
90-VFBGA(8x13)
- 包装
带卷(TR)
- 其它名称
557-1327-2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
micron(镁光) |
24+ |
标准封装 |
12048 |
全新原装正品/价格优惠/质量保障 |
|||
MRON/镁光 |
24+ |
NA/ |
100 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MICRON |
2016+ |
BGA |
5000 |
全新原装现货,只售原装,假一赔十! |
|||
MICRON |
23+ |
N/A |
20000 |
全新原装假一赔十 |
|||
MICRON |
17+ |
BGA |
32 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MICRON/美光 |
25+ |
BGA |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
MICRON |
06+ |
TSOP48 |
2600 |
全新原装进口自己库存优势 |
|||
Micron/镁光 |
24+ |
FBGA-60 |
8685 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
Micron/镁光 |
21+ |
FBGA-60 |
8080 |
只做原装,质量保证 |
|||
MICRON |
2024+ |
BGA |
500000 |
诚信服务,绝对原装原盘 |
MT47H128M8规格书下载地址
MT47H128M8参数引脚图相关
- op07
- OLED显示屏
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- OEM
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- nrf24l01
- nfc芯片
- NFC
- ne555定时器
- ne555
- nand闪存
- n74
- n100
- mxt
- murata
- mt7201
- mt6795
- MT4S23U
- MT4S07U
- MT4S07
- MT4S06
- MT4S04A
- MT4S03A
- MT4M5
- MT4K5
- MT4H5
- MT4G5
- MT4F5
- MT4E5
- MT4D5
- MT4C5
- MT4B5
- MT4A5
- MT48K3
- MT48K1
- MT-4896
- MT-48
- MT47H64M16NF-25EAAT:M
- MT47H64M16NF>A>
- MT47H64M16HR-3AAT:HTR
- MT47H64M16HR-25EIT:HTR
- MT47H32M16NF-25EIT:H
- MT47H32M16NF-25EAAT:HTR
- MT47H32M16NF-25E:HTR
- MT47H32M16NF-25E:H
- MT47H32M16HW-25EIT:G
- MT47H32M16HW-25EAAT:G
- MT47H32M16HR-25EIT:G
- MT47H32M16HR>M>
- MT47H32M16BT-3:ATR
- MT47H256M8EB-25EIT:C
- MT47H256M8EB-25E:C
- MT47H256M8EB->>
- MT47H256M4HQ-5E:ETR
- MT47H128M8SH-25EIT:M
- MT47H128M8CF-3>
- MT47H128M8BT-37E
- MT47H128M4BT-37E:ATR
- MT47H128M4B6-3:DTR
- MT47H128M16RT-3:C
- MT47H128M16RT-25EIT:C
- MT47H128M16RT-25E:C
- MT470-Y
- MT470-R
- MT470-G
- MT470
- MT46V64M8TG-5B:DTR
- MT46V64M16TG-6TIT:A
- MT46V64M16TG-6T:A
- MT46V32M8TG-5B/G
- MT46V32M8P-5B:M
- MT46V32M4TG-6T:DTR
- MT46V32M16P-5BIT:J
- MT46V32M16P-5BAIT:J
- MT46V32M16P-5B:JTR
- MT46V32M16P-5B:J
- MT46V32M16CY-5BIT:J
- MT46V32M16CY-5BAAT:J
- MT46V32M16CY-5B:J
- MT46V16M8TG-6TL:DTR
- MT46V16M8TG-6TIT:DTR
- MT4606
- MT4435
- MT4420
- MT4410
- MT440-Y
- MT440-O
- MT440-G
- MT4409
- MT4407
- MT430-Y
- MT430-O
- MT430-G
- MT400
- MT3S46T
- MT3S45T
- MT3S41T
MT47H128M8数据表相关新闻
MT47H128M16RT-25E:C 深圳旭亨半导体有限公司
MT47H128M16RT-25E:CMICRON原装现货长期供应0755-23615656/18566696862QQ:2880524286
2021-4-15MT47H32M16NF-25E:H
SDRAM16bit动态随机存取存储器,BGA-54SDRAM动态随机存取存储器,SDRAM32bit动态随机存取存储器,4GbitSDRAM-DDR3动态随机存取存储器,512MbitSDRAM32bit133MHz-40C动态随机存取存储器,512MbitTSOP-54SDRAM16bit动态随机存取存储器
2020-7-8MT47H128M8SH-25E IT:M
MT47H128M8SH-25EIT:M
2020-4-22MT47H256M8EB-25E IT:C
MT47H256M8EB-25EIT:C
2020-4-22MT47H128M16RT-25EIT:C公司原装现货
瀚佳科技(深圳)有限公司专业进口电子元器件代理商
2020-1-13MT47H128M16RT-25EIT:C原装现货,诚信经营
MT47H128M16RT-25EIT:C
2019-7-4
DdatasheetPDF页码索引
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