型号 功能描述 生产厂家 企业 LOGO 操作

16Gb: x4, x8, x16 DDR4 SDRAM

Features • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV, +250mV • On-die, internal, adjustable VREFDQ generation • 1.2V pseudo open-drain I/O • TC maximum up to 95°C – 64ms, 8192-cycle refresh up to 85°C – 32ms, 8192-cycle refresh at >85°C to 95°C • 16 internal banks (x4, x8): 4 groups of

Micron

美光

8Gb: x4, x8, x16 DDR4 SDRAM

FeaturesVDD = VDDQ = 1.2V ±60mV VPP = 2.5V, -125mV, +250mV On-die, internal, adjustable VREFDQ generation 1.2V pseudo open-drain I/O Refresh time of 8192-cycle at TC temperature range: - 64ms at -40℃ to 85℃ - 32ms at >85℃ to 95℃ - 16ms at >95℃ to 105℃ 16 internal banks (x4, x8): 4 group

Micron

美光

TwinDie™ 1.2V DDR4 SDRAM

Description The 32Gb (TwinDie™) DDR4 SDRAM uses Micron’s 16Gb DDR4 SDRAM die; two x8s combined to make one x16. It uses similar signals as the mono x16, and there is one extra ZQ connection for faster ZQ calibration and a BG1 control required for x8 addressing. Refer to Micron’s 16Gb DDR4 SDRAM d

Micron

美光

8Gb: x4, x8, x16 DDR4 SDRAM

FeaturesVDD = VDDQ = 1.2V ±60mV VPP = 2.5V, -125mV, +250mV On-die, internal, adjustable VREFDQ generation 1.2V pseudo open-drain I/O Refresh time of 8192-cycle at TC temperature range: - 64ms at -40℃ to 85℃ - 32ms at >85℃ to 95℃ - 16ms at >95℃ to 105℃ 16 internal banks (x4, x8): 4 group

Micron

美光

16Gb: x4, x8, x16 DDR4 SDRAM

Features • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV, +250mV • On-die, internal, adjustable VREFDQ generation • 1.2V pseudo open-drain I/O • TC maximum up to 95°C – 64ms, 8192-cycle refresh up to 85°C – 32ms, 8192-cycle refresh at >85°C to 95°C • 16 internal banks (x4, x8): 4 groups of

Micron

美光

16Gb: x4, x8, x16 DDR4 SDRAM

Features • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV, +250mV • On-die, internal, adjustable VREFDQ generation • 1.2V pseudo open-drain I/O • TC maximum up to 95°C – 64ms, 8192-cycle refresh up to 85°C – 32ms, 8192-cycle refresh at >85°C to 95°C • 16 internal banks (x4, x8): 4 groups of

Micron

美光

8Gb: x4, x8, x16 DDR4 SDRAM

FeaturesVDD = VDDQ = 1.2V ±60mV VPP = 2.5V, -125mV, +250mV On-die, internal, adjustable VREFDQ generation 1.2V pseudo open-drain I/O Refresh time of 8192-cycle at TC temperature range: - 64ms at -40℃ to 85℃ - 32ms at >85℃ to 95℃ - 16ms at >95℃ to 105℃ 16 internal banks (x4, x8): 4 group

Micron

美光

包装:托盘 描述:IC FLASH 64GBIT 1.6GHZ 集成电路(IC) 存储器

ETC

知名厂家

TwinDie 1.2V DDR4 SDRAM

文件:527.46 Kbytes Page:19 Pages

Micron

美光

封装/外壳:96-TFBGA 包装:卷带(TR) 描述:IC DRAM 16GBIT PARALLEL 96FBGA 集成电路(IC) 存储器

ETC

知名厂家

DDR4 16G X16 TFBGA

Micron

美光

DDR4 SDRAM

Micron

美光

DDR4 SDRAM

Micron

美光

TwinDie 1.2V DDR4 SDRAM

文件:527.46 Kbytes Page:19 Pages

Micron

美光

TwinDie 1.2V DDR4 SDRAM

文件:527.46 Kbytes Page:19 Pages

Micron

美光

4Gb: x4, x8, x16 DDR4 SDRAM

文件:11.19335 Mbytes Page:365 Pages

Micron

美光

4Gb: x4, x8, x16 DDR4 SDRAM

文件:11.19335 Mbytes Page:365 Pages

Micron

美光

Programmable data strobe preambles

文件:11.19335 Mbytes Page:365 Pages

Micron

美光

4Gb: x4, x8, x16 DDR4 SDRAM

文件:11.19335 Mbytes Page:365 Pages

Micron

美光

Programmable data strobe preambles

文件:11.2952 Mbytes Page:373 Pages

Micron

美光

Refresh time of 8192-cycle at TC temperature range

文件:11.41229 Mbytes Page:358 Pages

Micron

美光

Automotive DDR4 SDRAM

文件:11.41229 Mbytes Page:358 Pages

Micron

美光

Automotive DDR4 SDRAM

文件:11.41229 Mbytes Page:358 Pages

Micron

美光

4Gb: x4, x8, x16 DDR4 SDRAM

文件:11.19335 Mbytes Page:365 Pages

Micron

美光

Temperature controlled refresh (TCR)

文件:11.19335 Mbytes Page:365 Pages

Micron

美光

Automotive DDR4 SDRAM

文件:11.41832 Mbytes Page:359 Pages

Micron

美光

Automotive DDR4 SDRAM

文件:11.41832 Mbytes Page:359 Pages

Micron

美光

Programmable data strobe preambles

文件:11.2952 Mbytes Page:373 Pages

Micron

美光

Programmable data strobe preambles

文件:11.2952 Mbytes Page:373 Pages

Micron

美光

TwinDie 1.2V DDR4 SDRAM

文件:359.66 Kbytes Page:13 Pages

Micron

美光

TwinDie 1.2V DDR4 SDRAM

文件:466.6 Kbytes Page:21 Pages

Micron

美光

TwinDie 1.2V DDR4 SDRAM

文件:466.6 Kbytes Page:21 Pages

Micron

美光

TwinDie 1.2V DDR4 SDRAM

文件:466.6 Kbytes Page:21 Pages

Micron

美光

TwinDie 1.2V DDR4 SDRAM

文件:466.6 Kbytes Page:21 Pages

Micron

美光

Programmable data strobe preambles

文件:11.2952 Mbytes Page:373 Pages

Micron

美光

Programmable data strobe preambles

文件:11.2952 Mbytes Page:373 Pages

Micron

美光

8Gb: x4, x8, x16 DDR4 SDRAM

文件:11.41229 Mbytes Page:358 Pages

Micron

美光

Automotive DDR4 SDRAM

文件:11.41229 Mbytes Page:358 Pages

Micron

美光

Programmable data strobe preambles

文件:11.2952 Mbytes Page:373 Pages

Micron

美光

Programmable data strobe preambles

文件:11.19335 Mbytes Page:365 Pages

Micron

美光

DDR4 SDRAM

文件:11.19335 Mbytes Page:365 Pages

Micron

美光

Automotive DDR4 SDRAM

文件:11.41832 Mbytes Page:359 Pages

Micron

美光

Programmable data strobe preambles

文件:11.19335 Mbytes Page:365 Pages

Micron

美光

MT40A产品属性

  • 类型

    描述

  • 型号

    MT40A

  • 制造商

    Micron Technology Inc

  • 功能描述

    DDR4 4G 256MX16 FBGA - Trays

更新时间:2025-12-27 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICRON/镁光
100000
代理渠道/只做原装/可含税
Micron/镁光
24+
FBGA-96
8685
原厂原装正品现货,代理渠道,支持订货!!!
Micron Seniconductor Products
25+
SMD
918000
明嘉莱只做原装正品现货
Micron(镁光)
24+
96-TFBGA
7061
原厂可订货,技术支持,直接渠道。可签保供合同
MICRON
25+
FBGA96
6000
全新原装现货、诚信经营!
MICRON
存储器
BGA
41057
MICRON存储芯片MT40A1G16HBA-083E:A即刻询购立享优惠#长期有货
MICRON/美光
24+
NA
5000
原装正品 渠道优势 有需要请联系
MICRON/美光
2025+
BGA
4000
原装进口价格优 请找坤融电子!
MICRON
23+
FBGA96
2266
正规渠道,只有原装!
micron(镁光)
24+
BGA
48902
正规渠道,大量现货,只等你来。

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