TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE

VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.6dB (VCE = 3 V, IC = 3 mA, f = 2 GHz) • High Gain : |S21e|2 = 9.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz)

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE

Diode Network / ESD Suppressor

Feature This diode network is designedto provide four channels for active termination of high-speed data signals to eliminate signal undershootand overshoot. The network has the added benefit of acting to suppress any ESD voltage events by shunting the energy to ground assu

Steering Diode Arrays - ESD Suppressors

Features • (16kV) IEC 61000-4-2 capable • Fast Reverse Recovery Time • Fast Turn on Time • Low Capacitance • SMD Packages Applications • Signal Termination • Signal Conditioning • ESD Suppression • Transient Suppression

Diode Network / ESD Suppressor

Voltage: 8 Volts Current: 50 mA Feature This diode network is designed to provide four channels for active termination of high-speed data signals to eliminate signal undershoot and overshoot. The network has the added benefit of acting to suppress any ESD voltage events b

diode terminator network

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diode terminator network

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