TRANSISTOR SILICON NPN EPITAXIAL TYPE

VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TRANSISTOR SILICON NPN EPITAXIAL TYPE

Quad Sine-Wave Clock Buffer With LDO

1FEATURES • 1:4 Low-Jitter Clock Buffer • Single-Ended Sine-Wave Clock Input and Outputs • Ultralow Phase Noise and Standby Current • Individual Clock Request Inputs for Each Output • On-Chip Low-Dropout Output (LDO) for Low- Noise TCXO Supply • Serial I2C Interface (Compatible With High-

Quad Sine-Wave Clock Buffer With LDO

1FEATURES • 1:4 Low-Jitter Clock Buffer • Single-Ended Sine-Wave Clock Input and Outputs • Ultralow Phase Noise and Standby Current • Individual Clock Request Inputs for Each Output • On-Chip Low-Dropout Output (LDO) for Low- Noise TCXO Supply • Serial I2C Interface (Compatible With High-

Quad Sine-Wave Clock Buffer With LDO

1FEATURES • 1:4 Low-Jitter Clock Buffer • Single-Ended Sine-Wave Clock Input and Outputs • Ultralow Phase Noise and Standby Current • Individual Clock Request Inputs for Each Output • On-Chip Low-Dropout Output (LDO) for Low- Noise TCXO Supply • Serial I2C Interface (Compatible With High-

Quad Sine-Wave Clock Buffer With LDO

文件：1.28055 Mbytes Page：27 Pages

Quad Sine-Wave Clock Buffer With LDO

文件：1.28055 Mbytes Page：27 Pages