TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE

VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise : Figure : NF = 1.4 dB • High Gain : Gain = 8 dB (f = 2 GHz)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE

VHF~UHF Band Low-Noise Amplifier Applications

VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator/Buffer Applications • Superior performance in oscillator and Buffer applications • Superior noise characteristics : NF = 1.7 dB, |S21e|2 = 5.5 dB (f = 2 GHz)

SILICON NPN EPITAXIAL PLANAR TYPE

VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS ● Low Noise : Figure : NF = 1.4 dB ● High Gain : Gain = 8dB (f = 2GHz)

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB (at f = 2 GHz) • High gain: gain = 8dB (at f = 2 GHz)

VHF~UHF Band Low Noise Amplifier Applications

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Steering Diode Arrays - ESD Suppressors

Features • (16kV) IEC 61000-4-2 capable • Fast Reverse Recovery Time • Fast Turn on Time • Low Capacitance • SMD Packages Applications • Signal Termination • Signal Conditioning • ESD Suppression • Transient Suppression