型号 功能描述 生产厂家&企业 LOGO 操作
MT28F800B3

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

封装/外壳:44-SOIC(0.496",12.60mm 宽) 包装:卷带(TR) 描述:IC FLASH 8MBIT PARALLEL 44SOP 集成电路(IC) 存储器

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

封装/外壳:44-SOIC(0.496",12.60mm 宽) 包装:卷带(TR) 描述:IC FLASH 8MBIT PARALLEL 44SOP 集成电路(IC) 存储器

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

SMART3ADVANCEDBOOTBLOCK4-,8-,16-,32-MBITFLASHMEMORYFAMILY

INTRODUCTION ThisdatasheetcontainsthespecificationsfortheAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems.Thisfamilyofproductsfeatures1.65V–2.5Vor2.7V–3.6VI/OsandalowVCC/VPPoperatingrangeof2.7V–3.6Vforread,program,ande

IntelIntel Corporation

英特尔

Intel

SMART3ADVANCEDBOOTBLOCK4-,8-,16-,32-MBITFLASHMEMORYFAMILY

INTRODUCTION ThisdatasheetcontainsthespecificationsfortheAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems.Thisfamilyofproductsfeatures1.65V–2.5Vor2.7V–3.6VI/OsandalowVCC/VPPoperatingrangeof2.7V–3.6Vforread,program,ande

IntelIntel Corporation

英特尔

Intel

MT28F800B3产品属性

  • 类型

    描述

  • 型号

    MT28F800B3

  • 制造商

    MICRON

  • 制造商全称

    Micron Technology

  • 功能描述

    FLASH MEMORY

更新时间:2025-7-19 12:17:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICRON/镁光
1948+
SOP44
6852
只做原装正品现货!或订货假一赔十!
MIC
24+
TSSOP
17500
公司常备大量原装正品现货!量大价优!
MICRON
TSOP-48
68500
一级代理 原装正品假一罚十价格优势长期供货
MICRON/美光
25+
TSOP
996880
只做原装,欢迎来电资询
MRON/美光
24+
NA/
32
优势代理渠道,原装正品,可全系列订货开增值税票
MICRON
24+
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
23+
TSSOP
12032
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
INTEL
03+
TSSOP
16
原装
MIC
2020+
TSSOP-48
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
MOTOROLA
15+
TSSOP
11560
全新原装,现货库存,长期供应

MT28F800B3芯片相关品牌

  • ATS2
  • BETLUX
  • delta
  • Diotec
  • ETAL
  • KG
  • LUMBERG
  • Molex
  • MOLEX11
  • ONSEMI
  • WEIDMULLER
  • YFWDIODE

MT28F800B3数据表相关新闻