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位置：首页 > IC中文资料 > MT28F400B3

型号 功能描述 生产厂家 企业 LOGO 操作
MT28F400B3

FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

MICRON

美光

MT28F400B3SG-8B

FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

MICRON

美光

MT28F400B3SG-8T

FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

MICRON

美光

MT28F400B3VG-8B

FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

MICRON

美光

MT28F400B3VG-8T

FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

MICRON

美光

MT28F400B3WG-8B

FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

MICRON

美光

MT28F400B3WG-8T

FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

MICRON

美光

MT28F400B3SG-8 B TR

封装/外壳：44-SOIC（0.496"，12.60mm 宽） 包装：卷带（TR） 描述：IC FLASH 4MBIT PARALLEL 44SOP 集成电路（IC） 存储器

ETC

知名厂家

MT28F400B3SG-8 BET

封装/外壳：44-SOIC（0.496"，12.60mm 宽） 包装：卷带（TR） 描述：IC FLASH 4MBIT PARALLEL 44SOP 集成电路（IC） 存储器

ETC

知名厂家

MT28F400B3WG-8 T

IC FLASH 4M PARALLEL 48TSOP I

MICRON

美光

MT28F400B3WG-8 T TR

IC FLASH 4M PARALLEL 48TSOP I

MICRON

美光

MT28F400B3WG-8 TET

IC FLASH 4M PARALLEL 48TSOP I

MICRON

美光

28F400B3

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

INTEL

英特尔

28F400B3

SMART 3 ADVANCED BOOT BLOCK WORD-WIDE

INTRODUCTION This preliminary datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.8V–2.2V or 2.7V–3.6V I/Os and a low VCC/VPP operating range of 2.7V–3.6V for read and program

INTEL

英特尔

TE28F400B3

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

INTEL

英特尔

TE28F400B3

SMART 3 ADVANCED BOOT BLOCK WORD-WIDE

INTRODUCTION This preliminary datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.8V–2.2V or 2.7V–3.6V I/Os and a low VCC/VPP operating range of 2.7V–3.6V for read and program

INTEL

英特尔

MT28F400B3产品属性

  • 类型

    描述

  • 存储器格式：

    闪存

  • 技术：

    FLASH - NOR

  • 存储容量：

    4Mb （512K x 8，256K x 16）

  • 写周期时间 - 字，页：

    80ns

  • 访问时间：

    80ns

  • 存储器接口：

    并联

  • 电压 - 电源：

    3V ~ 3.6V

  • 工作温度：

    0°C ~ 70°C（TA）

  • 安装类型：

    表面贴装

  • 封装/外壳：

    44-SOIC（0.496\，12.60mm 宽）

  • 供应商器件封装：

    44-SOP

MT28F400B3供应商更多...

更新时间：2026-8-1 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市凌旭科技有限公司
MT28F400B3WG-8TF
MICRON
2016+
TSOP48
3500
只做原装,假一罚十,公司可开17%增值税发票!
询价
上海意淼电子科技有限公司
MT28F400B3SG-9
MICRON
23+
SOP
12000
全新原装假一赔十
询价
深圳市科恒伟业电子有限公司
MT28F400B3SG-8B
SMD
2450+
SMD
9850
只做原装正品现货或订货假一赔十!
询价
深圳市正纳电子有限公司
MT28F400B3SG-9B
micron(镁光)
26+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
深圳市佳鑫美电子科技有限公司
MT28F400B3WG-9BE
MT
25+
TSOP
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
深圳市华斯顿科技有限公司
MT28F400B3WG-10BET
MICRON
25+23+
TSOP48
37435
绝对原装正品全新进口深圳现货
询价
深圳市华来深电子有限公司
MT28F400B3SG-9
MICRON
23+
SOP-44
8560
受权代理!全新原装现货特价热卖!
询价
深圳市恒达亿科技有限公司
MT28F400B3SG-9
MICRON
25+
SOP
4500
全新原装、诚信经营、公司现货销售!
询价
标准国际(香港)有限公司
MT28F400B3WG-9TE
MICRON
25+
230
全新原装!优势库存热卖中!
询价
深圳市向鸿伟业电子有限公司
MT28F400B3WG-8BET
MICRON
25+
TSOP48
1208
原装现货
询价

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