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位置：首页 > IC中文资料第6041页 > MT28F400B3

型号 功能描述 生产厂家 企业 LOGO 操作
MT28F400B3

FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

MICRON

美光

MT28F400B3SG-8B

FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

MICRON

美光

MT28F400B3SG-8T

FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

MICRON

美光

MT28F400B3VG-8B

FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

MICRON

美光

MT28F400B3VG-8T

FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

MICRON

美光

MT28F400B3WG-8B

FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

MICRON

美光

MT28F400B3WG-8T

FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

MICRON

美光

MT28F400B3SG-8 B TR

封装/外壳：44-SOIC（0.496"，12.60mm 宽） 包装：卷带（TR） 描述：IC FLASH 4MBIT PARALLEL 44SOP 集成电路（IC） 存储器

ETC

知名厂家

MT28F400B3SG-8 BET

封装/外壳：44-SOIC（0.496"，12.60mm 宽） 包装：卷带（TR） 描述：IC FLASH 4MBIT PARALLEL 44SOP 集成电路（IC） 存储器

ETC

知名厂家

MT28F400B3WG-8 T

IC FLASH 4M PARALLEL 48TSOP I

MICRON

美光

MT28F400B3WG-8 T TR

IC FLASH 4M PARALLEL 48TSOP I

MICRON

美光

MT28F400B3WG-8 TET

IC FLASH 4M PARALLEL 48TSOP I

MICRON

美光

28F400B3

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

INTEL

英特尔

28F400B3

SMART 3 ADVANCED BOOT BLOCK WORD-WIDE

INTRODUCTION This preliminary datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.8V–2.2V or 2.7V–3.6V I/Os and a low VCC/VPP operating range of 2.7V–3.6V for read and program

INTEL

英特尔

TE28F400B3

SMART 3 ADVANCED BOOT BLOCK WORD-WIDE

INTRODUCTION This preliminary datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.8V–2.2V or 2.7V–3.6V I/Os and a low VCC/VPP operating range of 2.7V–3.6V for read and program

INTEL

英特尔

TE28F400B3

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

INTEL

英特尔

MT28F400B3产品属性

  • 类型

    描述

  • 型号

    MT28F400B3

  • 制造商

    MICRON

  • 制造商全称

    Micron Technology

  • 功能描述

    FLASH MEMORY

MT28F400B3供应商更多...

更新时间：2026-3-9 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
MT28F400B3SG-8TTR
micron(镁光)
25+
TPBGA-24(6x8)
6843
样件支持,可原厂排单订货!
询价
深圳市得捷芯城科技有限公司
MT28F400B3SG-8TTR
micron(镁光)
25+
TPBGA-24(6x8)
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
深圳市凌旭科技有限公司
MT28F400B3WG-8TF
MICRON
2016+
TSOP48
3500
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市威雅利发展有限公司
MT28F400B3WG-8BET
MICRON
16+
TSOP48
1208
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
上海意淼电子科技有限公司
MT28F400B3SG-9
MICRON
23+
SOP
12000
全新原装假一赔十
询价
深圳市赛美科科技有限公司
MT28F400B3SG-9B
MICRON
SOP44
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
深圳市诺美思科技有限公司
MT28F400B3WG-8BET
MICRON
原厂封装
9800
原装进口公司现货假一赔百
询价
深圳市益百分电子有限公司
MT28F400B3SG-9TE
MT
SOP44
19
全新原装进口自己库存优势
询价
深圳市正纳电子有限公司
MT28F400B3SG-9B
micron(镁光)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
标准国际(香港)有限公司
MT28F400B3WG-9TE
MICRON
25+
230
全新原装!优势库存热卖中!
询价

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