型号 功能描述 生产厂家 企业 LOGO 操作
MT28F320J3

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

封装/外壳:64-FBGA 包装:管件 描述:IC FLASH 32MBIT PARALLEL 64FBGA 集成电路(IC) 存储器

ETC

知名厂家

IC FLASH 32M PARALLEL 64FBGA

Micron

美光

IC FLASH 32M PARALLEL 64FBGA

Micron

美光

封装/外壳:64-FBGA 包装:管件 描述:IC FLASH 32MBIT PARALLEL 64FBGA 集成电路(IC) 存储器

ETC

知名厂家

IC FLASH 32M PARALLEL 64FBGA

Micron

美光

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

MT28F320J3产品属性

  • 类型

    描述

  • 型号

    MT28F320J3

  • 制造商

    MICRON

  • 制造商全称

    Micron Technology

  • 功能描述

    Q-FLASHTM MEMORY

更新时间:2025-12-24 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MRON/美光
24+
NA/
893
优势代理渠道,原装正品,可全系列订货开增值税票
MICRON
2016+
BGA64
3500
只做原装,假一罚十,公司可开17%增值税发票!
MICRON/美光
25+
TSSOP56
32360
MICRON/美光全新特价MT28F320J3即刻询购立享优惠#长期有货
MICRON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
MICRON/镁光
BGA64
125000
一级代理原装正品,价格优势,长期供应!
MICRON/美光
2223+
FBGA64
26800
只做原装正品假一赔十为客户做到零风险
MIC
24+
9850
公司原装现货/随时可以发货
MICRON
25+
50
全新原装!优势库存热卖中!
MICRON
原厂封装
9800
原装进口公司现货假一赔百
INTEL
23+
NA
400
专做原装正品,假一罚百!

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