型号 功能描述 生产厂家 企业 LOGO 操作
MT28F320J3

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

封装/外壳:64-FBGA 包装:管件 描述:IC FLASH 32MBIT PARALLEL 64FBGA 集成电路(IC) 存储器

ETC

知名厂家

IC FLASH 32M PARALLEL 64FBGA

MICRON

美光

IC FLASH 32M PARALLEL 64FBGA

MICRON

美光

封装/外壳:64-FBGA 包装:管件 描述:IC FLASH 32MBIT PARALLEL 64FBGA 集成电路(IC) 存储器

ETC

知名厂家

IC FLASH 32M PARALLEL 64FBGA

MICRON

美光

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

INTEL

英特尔

MT28F320J3产品属性

  • 类型

    描述

  • 型号

    MT28F320J3

  • 制造商

    MICRON

  • 制造商全称

    Micron Technology

  • 功能描述

    Q-FLASHTM MEMORY

更新时间:2026-3-1 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Micron(镁光)
25+
N/A
18798
原装正品现货,原厂订货,可支持含税原型号开票。
MICRON
2016+
BGA64
3500
只做原装,假一罚十,公司可开17%增值税发票!
MIC
24+
9850
公司原装现货/随时可以发货
Micron(镁光)
25+
N/A
18798
原装正品现货,原厂订货,可支持含税原型号开票。
Micron Technology Inc.
24+25+
16500
全新原厂原装现货!受权代理!可送样可提供技术支持!
MICRON
25+
50
全新原装!优势库存热卖中!
MICRON
04+
FBGA64
996
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MICRON
25+
TSOP
937
原装现货
MICRON
22+
TSOP
2000
原装正品现货
MICRON/镁光
2447
TSSOP56
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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