位置:MT28F320J3FS-11ET > MT28F320J3FS-11ET详情

MT28F320J3FS-11ET中文资料

厂家型号

MT28F320J3FS-11ET

文件大小

548.36Kbytes

页面数量

52

功能描述

Q-FLASHTM MEMORY

NAND Flash Parallel 3.3V 32Mbit 4M/2M x 8bit/16bit 110ns 64-Pin FBGA Tray

数据手册

下载地址一下载地址二到原厂下载

简称

MICRON镁光

生产厂商

Micron Technology

中文名称

美国镁光科技有限公司官网

LOGO

MT28F320J3FS-11ET数据手册规格书PDF详情

GENERAL DESCRIPTION

The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F640J3 contains 67,108,864 bits organized as 8,388,608 bytes (8 bits) or 4,194,304 words (16 bits). This 64Mb device is organized as sixty-four 128KB erase blocks.

Similarly, the MT28F320J3 contains 33,554,432 bits organized as 4,194,304 bytes (8 bits) or 2,097,152 words (16 bits). This 32Mb device is organized as thirty-two 128KB erase blocks.

These three devices feature in-system block locking. They also have common flash interface (CFI) that permits software algorithms to be used for entire families of devices. The software is device-independent, JEDEC ID-independent with forward and backward compatibility.

FEATURES

• x8/x16 organization

• One hundred twenty-eight 128KB erase blocks (128Mb)

Sixty-four 128KB erase blocks (64Mb)

Thirty-two 128KB erase blocks (32Mb)

• VCC, VCCQ, and VPEN voltages:

2.7V to 3.6V VCC operation

2.7V to 3.6V or 4.5V to 5.5V* VCCQ operation

2.7V to 3.6V, or 5V VPEN application programming

• Interface Asynchronous Page Mode Reads:

150ns/25ns read access time (128Mb)

120ns/25ns read access time (64Mb)

110ns/25ns read access time (32Mb)

• Enhanced data protection feature with VPEN = VSS Flexible sector locking Sector erase/program lockout during power transition

• Security OTP block feature Permanent block locking (Contact factory for availability)

• Industry-standard pinout

• Inputs and outputs are fully TTL-compatible

• Common Flash Interface (CFI) and Scalable Command Set

• Automatic write and erase algorithm

• 4.7µs-per-byte effective programming time using write buffer

• 128-bit protection register

64-bit unique device identifier

64-bit user-programmable OTP cells

• 100,000 ERASE cycles per block

• Automatic suspend options:

Block Erase Suspend-to-Read

Block Erase Suspend-to-Program

Program Suspend-to-Read

MT28F320J3FS-11ET产品属性

  • 类型

    描述

  • 型号

    MT28F320J3FS-11ET

  • 制造商

    Micron Technology Inc

  • 功能描述

    NAND Flash Parallel 3.3V 32Mbit 4M/2M x 8bit/16bit 110ns 64-Pin FBGA Tray

更新时间:2025-6-3 14:07:00
供应商 型号 品牌 批号 封装 库存 备注 价格
MICRON
24+
TSOP
4650
MICRON
2020+
FBGA
4800
百分百原装正品 真实公司现货库存 本公司只做原装 可
MICRON
23+
SMD
5000
原装正品,假一罚十
MICRON
18+
FBGA
30887
全新原装现货,可出样品,可开增值税发票
MICRON
24+
FBGA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
MICRON
2447
FBGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
MICRON/镁光
24+
FBGA
9600
原装现货,优势供应,支持实单!
MICRON/美光
23+
BGA
50000
全新原装正品现货,支持订货
MICRON/镁光
24+
FBGA
25500
授权代理直销,原厂原装现货,假一罚十,特价销售
MICRON
20+
BGA-64
1001
就找我吧!--邀您体验愉快问购元件!

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Micron Technology 美国镁光科技有限公司

中文资料: 7278条

Micron Technology 是一家全球领先的半导体公司,专注于存储和内存解决方案的开发与制造。成立于1978年,总部位于美国爱达荷州博伊西,Micron 的产品包括动态随机存取存储器(DRAM)、闪存(NAND)、以及其他类型的内存和存储组件,广泛应用于个人计算机、移动设备、服务器、数据中心和工业设备等多个领域。公司致力于通过创新与研发推动技术进步,提供高性能、高可靠性的产品,以满足全球客户不断变化的需求。Micron 还积极参与可持续发展和社会责任,致力于在创新与环境保护之间取得平衡。