型号 功能描述 生产厂家 企业 LOGO 操作

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

1.8V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase

Features • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 166 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s • Supported protocols in both STR and

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

1.8V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase

Features • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 166 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s • Supported protocols in both STR and

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

1.8V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase

Features • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 166 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s • Supported protocols in both STR and

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

1.8V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase

Features • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 166 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s • Supported protocols in both STR and

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

1.8V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase

Features • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 166 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s • Supported protocols in both STR and

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

1.8V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase

Features • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 166 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s • Supported protocols in both STR and

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

1.8V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase

Features • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 166 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s • Supported protocols in both STR and

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

1.8V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase

Features • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 166 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s • Supported protocols in both STR and

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

更新时间:2025-12-24 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MRON/美光
24+
NA/
21
优势代理渠道,原装正品,可全系列订货开增值税票
Micron/镁光
24+
WDFN-8
6000
全新原装深圳仓库现货有单必成
MICRON
22+
WPDFN8
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
MICRON
25+
WPDFN8
30000
代理全新原装现货,价格优势
micron(镁光)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
Micron/镁光
24+
WDFN-8
30000
原装正品公司现货,假一赔十!
Micron/镁光
21+
WDFN-8
8080
只做原装,质量保证
Micron
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
MICRON
25+
WPDFN8
10000
原厂原装,价格优势
MICRON/镁光
22+
TBGA
12245
现货,原厂原装假一罚十!

MT25QL512数据表相关新闻