型号 功能描述 生产厂家 企业 LOGO 操作

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

更新时间:2025-12-24 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
micron(镁光)
24+
16SOIC(0.295,7.50mm 宽)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
Micron/镁光
24+
WDFN-8
6000
全新原装深圳仓库现货有单必成
MICRON/美光
24+
SOP16
8000
原厂原装,价格优势,欢迎洽谈!
MICRON/美光
23+
SOP16
20000
MICRON/美光
25+
WPDFN8
12500
全新原装现货,假一赔十
micron(镁光)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
MICRON
原厂封装
9800
原装进口公司现货假一赔百
MICRON/美光
24+
SOP16
5000
全新原装正品,现货销售
Micron
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
Micron Technology Inc.
23+
16-SOIC
3600
特惠实单价格秒出原装正品假一罚万

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