型号 功能描述 生产厂家 企业 LOGO 操作

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

更新时间:2025-12-26 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
micron(镁光)
24+
NA/
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
micron(镁光)
2526+
Original
50000
只做原装优势现货库存,渠道可追溯
micron(镁光)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
MICRON/镁光
25+
SOP8
25000
代理原装现货,假一赔十
MICRON/美光
21+
SOP8
2000
百域芯优势 实单必成 可开13点增值税
Micron
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
micron(镁光)
2021+
SOP2-8
499
MICRON
24+
N/A
8000
全新原装正品,现货销售
MICRON
16+
SOP8
12000
代理原装
MICRON/美光
24+
NA
20000
美光专营原装正品

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