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型号	功能描述	生产厂家&企业	LOGO
MT25QL01GBBB	Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (two 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1E12-0AITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1E12-0SATES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1E12-0SITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1E14-0AITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1E14-0SATES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1E14-0SITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1E5X-0AITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1E5X-0SATES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1E5X-0SITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1ESC-0AITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1ESC-0SATES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1ESC-0SITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1ESE-0AITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1ESE-0SATES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1ESE-0SITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1ESF-0AATES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1ESF-0AITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1ESF-0SATES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1ESF-0SITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1EW7-0AITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1EW7-0SATES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1EW7-0SITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1EW9-0AITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1EW9-0SATES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB1EW9-0SITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3E12-0AITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3E12-0SATES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3E12-0SITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3E14-0AITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3E14-0SATES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3E14-0SITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3E5X-0AITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3E5X-0SATES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3E5X-0SITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3ESC-0AITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3ESC-0SATES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3ESC-0SITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3ESE-0AITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3ESE-0SATES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3ESE-0SITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3ESF-0AITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3ESF-0SATES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3ESF-0SITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3EW7-0AITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3EW7-0SATES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3EW7-0SITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3EW9-0AITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3EW9-0SATES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB3EW9-0SITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB8E12-0AAT	Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (two 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB8E12-0AITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB8E12-0SATES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB8E12-0SITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB8E14-0AITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB8E14-0SATES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB8E14-0SITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB8E5X-0AITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB8E5X-0SATES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron
MT25QL01GBBB8E5X-0SITES	2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •	Micron 镁光	Micron

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更新时间：2025-8-13 18:38:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市威雅利发展有限公司	MT25QL01GBBB8ESF-0SIT	MICRION	15+	SOP16	48	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
中天科工半导体（深圳）有限公司	MT25QL01GBBB8ESF-0SIT	MICRON/美光	25+	SOP16	12496	MICRON/美光原装正品MT25QL01GBBB8ESF-0SIT即刻询购立享优惠#长期有货	询价
深圳市弘扬芯城科技有限公司	MT25QL01GBBB8ESF-0SIT	MICRON	2024+	SOP16	500000	诚信服务,绝对原装原盘	询价
深圳市明嘉莱科技有限公司	MT25QL01GBBB1EW9-0SIT	MICRON/美光	25+	NA	880000	明嘉莱只做原装正品现货	询价
深圳市科恒伟业电子有限公司	MT25QL01GBBB8ESF-0SIT	MICRON/镁光	2447+	SOP16	9657	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市科芯源微电子有限公司	MT25QL01GBBB8E12-0SIT	MICRON/镁光	25+	BGA24	996880	只做原装,欢迎来电资询	询价
深圳市凌旭科技有限公司	MT25QL01GBBB8ESF-0SIT	MICRON	21+	SOP16	1398	只做原装正品,不止网上数量,欢迎电话微信查询!	询价
深圳市冠亿通科技有限公司	MT25QL01GBBB8E12-0SIT	MICRON/美光	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市赛美科科技有限公司	MT25QL01GBBB8ESF-0SIT	MICRON		SOP16	9962	一级代理原装正品假一罚十价格优势实单带接受价	询价
深圳市宇集芯电子有限公司	MT25QL01GBBB8ESF-0SIT	MICRON	24+	SOIC16	12000	一级代理现货保证进口原装正品假一罚十价格合理	询价

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深圳市瑞智芯科技有限公司联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 详细描述：型号：MSZ3ZTG47 品牌：纵行科技品类：ZETag测试模块系列：MSZ3ZTG 最小包装量 1 工作频率 433MHz，470MHz，868MHz，915MHz 待机电流
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MT25QL01GBBB供应商更多...

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