型号 功能描述 生产厂家 企业 LOGO 操作
MT25QL01GBBB

Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (two 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (two 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase

Features • Stacked device (four 512Mb die) • SPI-compatible serial bus interface • Single and double transfer rate (STR/DTR) • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR • Dual/quad I/O commands for increased throughput up to 90 MB/s •

Micron

美光

更新时间:2025-9-27 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
micron(镁光)
24+
标准封装
11298
全新原装正品/价格优惠/质量保障
MRON/美光
24+
NA/
1000
优势代理渠道,原装正品,可全系列订货开增值税票
Micron/镁光
24+
T-PBGA-24
30000
原装正品公司现货,假一赔十!
MICRON/美光
22+
BGA24
100000
代理渠道/只做原装/可含税
MICRON/镁光
25+
BGA24
996880
只做原装,欢迎来电资询
MT
24+
QFN
8000
原装,正品
MICRON
2024+
SOP16
500000
诚信服务,绝对原装原盘
MICRON/美光
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
MICRON/美光
25+
NA
880000
明嘉莱只做原装正品现货
MICRON/美光
SOP16
4000
原装现货支持BOM配单服务

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