60V(D-S) N-Channel Enhancement Mode Power MOS FET

文件：395.3 Kbytes Page：6 Pages

Low Voltage MOS FETs

700V(D-S) N-Channel Enhancement Mode Power MOS FET

文件：725.62 Kbytes Page：4 Pages

60V(D-S) N-Channel Enhancement Mode Power MOS FET

文件：372.03 Kbytes Page：6 Pages

Low Voltage MOS FETs

60V(D-S) N-Channel Enhancement Mode Power MOS FET

文件：372.03 Kbytes Page：6 Pages

High Voltage MOS FETs

700V(D-S) N-Channel Enhancement Mode Power MOS FET

文件：782.9 Kbytes Page：4 Pages

60V(D-S) N-Channel Enhancement Mode Power MOS FET

文件：395.3 Kbytes Page：6 Pages

700V(D-S) N-Channel Enhancement Mode Power MOS FET

文件：702.05 Kbytes Page：4 Pages

1.8GHz THREE GAIN LEVEL LNA

DESCRIPTION The STB7002 is a Silicon monolithic amplifier, that offers low noise figure and three gain levels for 1.8GHz applications. STB7002 is housed in a small industry-standard MSOP8-EP surface mount package, requiring very little board space (50 reduction vs SO8 Package). MSOP8-EP dimensi

Common Mode EMI Chokes

Special Features • Dual winding • Low radiation • High current capacity • High inductance • Dielectric strength 1000Vrms • Mounted on VW-1 rated header • Fixed pins for easy PCB insertion • Operating temperature -55 to +105°C

C-band Crossbar/Fan-Out

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Male Pins

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toggle switches

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