2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The MSM56V16800E is a 2-bank x 1,048,576-word x 8-bit synchronous dynamic RAM, fabricated in Okis CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible. FEATURES • Silicon gate, quadruple polysilicon CMOS, 1-transistor memory

2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM

2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The MSM56V16800D/DH is a 2-bank x 1,048,576-word x 8-bit synchronous dynamic RAM, fabricated in Okis CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible. FEATURES • Silicon gate, quadruple polysilicon CMOS, 1-transistor mem

2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The MSM56V16800D/DH is a 2-bank x 1,048,576-word x 8-bit synchronous dynamic RAM, fabricated in Okis CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible. FEATURES • Silicon gate, quadruple polysilicon CMOS, 1-transistor mem

2-Bank x 1,048,576 Word x 8 Bit SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The MSM56V16800F is a 2-Bank x 1,048,576-word x 8 bit Synchronous dynamic RAM, fabricated in OKI’s CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL compatible. FEATURES · Silicon gate , quadruple polysilicon CMOS , 1-transis