Thyristor/Diode Modules

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NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The VHB40-12F is Designed for Class C Amplifier Applications in VHF Mobile Radios. FEATURES: · PG = 9.5 dB Typ. at 40 W /175 MHz · hC = 60 Typ. at 40 W /175 MHz · Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB40-12S is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 8.5 dB at 40 W/175 MHz • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VLB40-12F is a common Emitter transistor, designed for VHF FM amplifier operations in military, commercial and amateur communication equipment. FEATURES: • PG = 13 dB min. at 40 W/50 MHz • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VMB40-12F is Designed for 12.5 V, Medium Band Class C Applications. FEATURES: • Common Emitter • PG = 10 dB @ 40W/175MHz • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VMB40-12S is Designed for 12.5 V, Medium Band Class C Application. FEATURES: • Common Emitter • PG = 10 dB at 40 W/175 MHz • Omnigold™ Metalization System