封装/外壳：模块 包装：盒 描述：PM-DIODE-SIC-SBD-SP6C 分立半导体产品 二极管 - 整流器 - 阵列

700V, 600A, SP6C Phase Leg mSiC™ Diode Module

700V, aMOS5TM N-Channel Power Transistor

General Description • Proprietary aMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • Flyback for SMPS• Charger ,PD Adapter, TV, lighting.

700V, aMOS5TM N-Channel Power Transistor

General Description • Proprietary aMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • Flyback for SMPS• Charger ,PD Adapter, TV, lighting.

700V, aMOS5TM N-Channel Power Transistor

General Description • Proprietary aMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • Flyback for SMPS• Charger,PD Adapter,TV,lighting

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8.5A@ TC=25℃ · Drain Source Voltage -VDSS= 700V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-AC inverter, power switch

700V, aMOS5TM N-Channel Power Transistor

General Description • Proprietary aMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • Flyback for SMPS• Charger ,PD Adapter, TV, lighting.